Mosfets

Type of Control Channel: N Or P Channel
V_ds : Maximum Drain-Source Voltage
P_d : Maximum Power Dissipation
V_gs : Maximum Gate-Source Voltage
I_d : Maximum Drain Current
t_r : Rise Time 0.01 ns for example
C_d : drain-source capacitance for example 600 pf
R_ds : maximum drain-source on-state resistance 0.01 ohm for example

In a power MOSFET, the gate is insulated by a thin silicon oxide. Therefore, a power MOSFET has capacitances between the gate-drain, gate-source and drain-source terminals as shown in

BJT

Polarity: NPN
P_c : Maximum Collector Power Dissipation
V_cb : Maximum Collector-Base Voltage
V_ce : Maximum Collector-Emitter Voltage
V_eb : Maximum Emitter-Base Voltage
I_c : Maximum Collector Current
f_t : Transition Frequency The transition frequency describes how the transistor’s current gain is affected by the input frequency. This is a low pass effect, so frequencies beyond 600 kHz on the original part or 4 MHz on the new one would start to be attenuated. Audible frequency range is 20 Hz – 20 kHz which is far below the transition frequency of both parts. No effects should be noticeable
C_c : Collector Capacitance
hfe : Forward Current Transfer Ratio